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New technique protects data on solid-state drives from radiation

Dr. Biswajit Ray, proper, with college students (from left) Matchima Buddhanoy, Sijay Huang, Umeshwarnath Surendranathan and Modol Anik Kumar within the Ray Research Group lab. Credit: Michael Mercier / UAH

A brand new methodology of radiation-resistant laptop knowledge storage known as watermark storage that is been developed by a University of Alabama in Huntsville (UAH) professor main a scholar crew has direct purposes within the nuclear energy and house industries.

“Data-driven analytics are growing exponentially for space and nuclear environments,” says Dr. Biswajit Ray, an assistant professor {of electrical} and computer engineering at UAH, part of the University of Alabama System.

He says the brand new storage system would not depend on an digital cost for NAND flash storage, as conventional knowledge drives do. NAND stands for the “not and” sort of flash reminiscence, which is in widespread use. Apparently, the watermark storage methodology requires no new elements.

“We adeptly use the breakdown mechanism of a transistor’s oxide layer to imprint information on the same commercial off-the-shelf memory cells,” Dr. Ray says. “This technique is more resistant to irradiation damage compared to the traditional charge-based technique.”

He is been working with Kannan Grant, director of UAH’s Workplace of Expertise Commercialization, on a pending patent for the brand new know-how.

Radiation tolerance is often characterised as cumulative complete dose, as expressed in items of rad(Si). So, how radiation tolerant is watermark knowledge storage?

“We have tested the chips up to 100 krad(Si) and we find clear benefits using our method compared to the traditional charge based method,” Dr. Ray says. Only one krad is 1,000 rads, a robust sufficient radiation dose to kill an individual.

“Our method shows a linear response of the bit error rate with a total dose, whereas the traditional method shows an exponential rise,” he says.

Whereas a lot much less knowledge is misplaced in radioactive environments with the watermark approach, there’s a draw back. Information writing time is slower than conventional digital storage, however Dr. Ray says that a few of that draw back could be minimized if NAND chip producers enable just a few extra operations on their chips.

“Writing time for traditional NAND flash media is roughly a few milliseconds per 16kB page, whereas imprinting time in our proposal will be a few seconds,” he says. “So, data writing time will increase by about 1,000 times. However, the proposed technique targets those applications where writing will be done only once and hence it will not be a significant bottleneck.”

Dr. Ray’s electrical and laptop engineering scholar crew members within the Ray Research Group, and the co-authors of the ensuing analysis paper, are Matchima Buddhanoy, a doctoral scholar and the lead creator; Sadman Sakib, a latest doctoral graduate now working at Intel; and Umeshwarnath Surendranathan, a doctoral scholar.

Collaborators and co-authors are Dr. Aleksandar Milenković, a UAH professor {of electrical} and laptop engineering, and Dr. Maryla Wasiolek and Dr. Khalid Hattar, principal members of the technical employees at Sandia Nationwide Laboratories in Albuquerque, N.M.

Sandia supplied assist with Cobalt-60 gamma irradiation sources and helped conduct the experiments. The collaboration was contractually supported partly by the U.S. Division of Vitality’s Workplace of Nuclear Vitality by means of its Idaho Operations Workplace.

Future analysis can be partially supported by Dr. Ray’s five-year, $650,000 Nationwide Science Basis CAREER grant to create extra resilient, sturdy and energy-efficient laptop reminiscence drives. The work will contain additional radiation testing of the brand new approach, Dr. Ray says.

We wish to discover and take a look at this system for a really excessive radiation setting corresponding to a complete dose of greater than 1 megarad(Si),” he says.

“At a very high total dose NAND peripheral circuits fail, making the chip non-functional. We plan to work with NAND manufacturers to build rad-hard NAND peripherals. We also plan to evaluate high-dose response by selective shielding of the peripherals.”

Boosting memory performance with strong ion bombardment

Extra info:
Matchima Buddhanoy et al, New Whole-Ionizing-Dose Resistant Information Storing Method for NAND Flash Reminiscence, IEEE Transactions on System and Supplies Reliability (2022). DOI: 10.1109/TDMR.2022.3189673

New approach protects knowledge on solid-state drives from radiation (2022, August 2)
retrieved 2 August 2022

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